Andrew
May25-04, 01:33 AM
<jabberwocky><div class="vbmenu_control"><a href="jabberwocky:;" onClick="newWindow=window.open('','usenetCode','toolbar=no, location=no,scrollbars=yes,resizable=yes,status=no ,width=650,height=400'); newWindow.document.write('<HTML><HEAD><TITLE>Usenet ASCII</TITLE></HEAD><BODY topmargin=0 leftmargin=0 BGCOLOR=#F1F1F1><table border=0 width=625><td bgcolor=midnightblue><font color=#F1F1F1>This Usenet message\'s original ASCII form: </font></td></tr><tr><td width=449><br><br><font face=courier><UL><PRE>D. Chrastina and his colleagues from the Politecnico di Milano and the ETH\nZurich have developed a method to grow thin relaxed SiGe virtual substrates\nby low-energy plasma-enhanced chemical vapor deposition (LEPECVD).\nSelf-heating of field-effect transistors on these virtual substrates is much\nreduced while the maximum oscillation and transit frequencies remain very\nhigh. LEPECVD is shown to be an excellent deposition technique for next\ngeneration integrated circuit technology.\n\nThe full article: http://www.physorg.com/news108.html\n\nThere is also a discussion where the author (Dr. D. Chrastina) answers the\nquestions.\n\n</UL></PRE></font></td></tr></table></BODY><HTML>');"> <IMG SRC=/images/buttons/ip.gif BORDER=0 ALIGN=CENTER ALT="View this Usenet post in original ASCII form"> View this Usenet post in original ASCII form </a></div><P></jabberwocky>D. Chrastina and his colleagues from the Politecnico di Milano and the ETH
Zurich have developed a method to grow thin relaxed SiGe virtual substrates
by low-energy plasma-enhanced chemical vapor deposition (LEPECVD).
Self-heating of field-effect transistors on these virtual substrates is much
reduced while the maximum oscillation and transit frequencies remain very
high. LEPECVD is shown to be an excellent deposition technique for next
generation integrated circuit technology.
The full article: http://www.physorg.com/news108.html
There is also a discussion where the author (Dr. D. Chrastina) answers the
questions.
Zurich have developed a method to grow thin relaxed SiGe virtual substrates
by low-energy plasma-enhanced chemical vapor deposition (LEPECVD).
Self-heating of field-effect transistors on these virtual substrates is much
reduced while the maximum oscillation and transit frequencies remain very
high. LEPECVD is shown to be an excellent deposition technique for next
generation integrated circuit technology.
The full article: http://www.physorg.com/news108.html
There is also a discussion where the author (Dr. D. Chrastina) answers the
questions.