How crystallographic planes related to surface energy

[sttan]

Hi all, I'm recently growing epitaxy layer by MOCVD and found out that all my films exhibit polycrystalline with almost all the available crystallographic planes. I had tried to modified the flow rate and gas flow direction and found no improvement towards getting single crystallographic plane. Does anyone know how this is related to the surface energy of the crystallographic plane?

Thank you and looking forward to your insight view.

ST :confused: