bg_gap
Jul15-10, 01:47 AM
as i know, reverse saturation current is due to diffusion of the minority carrier and generation and recombination of electron-hole pairs.
But in this case, i would like to measure the temperature dependence against the bandgap, so which term i should ignore??
and why the measurement of the practical value of the silicon bangap is different with the theory. i get a value of 1.352eV for silicon bangap. can anyone please explain
But in this case, i would like to measure the temperature dependence against the bandgap, so which term i should ignore??
and why the measurement of the practical value of the silicon bangap is different with the theory. i get a value of 1.352eV for silicon bangap. can anyone please explain