compound
Nov30-10, 05:12 AM
hi guys
I want to do wet etch(not dry etch) to remove Silicon Nitride(thickness:200A) on InGaAs samples by using diluted HF(Hydrogen fluoride).
but I am not sure diluted HF(10(DI):1(HF)) make damage to InGaAs or InAlAs or InP....
anybody have some idea?
I want to do wet etch(not dry etch) to remove Silicon Nitride(thickness:200A) on InGaAs samples by using diluted HF(Hydrogen fluoride).
but I am not sure diluted HF(10(DI):1(HF)) make damage to InGaAs or InAlAs or InP....
anybody have some idea?