InGaAsP
May28-11, 12:42 AM
Hello all
I have a p-i-n diode structure. I am applying a forward bias to diode, so that holes from p region, and electrons from n region are injected inside the i region.
Now, I need to find a relationship between the applied bias/current vs the number of holes and electrons that are injected inside the i region.
The starting point is from the drift diffusion equations of P-N diode, but however, I am unable to figure out how to solve it.
Could anyone be kind enough to shed some light on this?
Thank you in advance
InGaAsP
I have a p-i-n diode structure. I am applying a forward bias to diode, so that holes from p region, and electrons from n region are injected inside the i region.
Now, I need to find a relationship between the applied bias/current vs the number of holes and electrons that are injected inside the i region.
The starting point is from the drift diffusion equations of P-N diode, but however, I am unable to figure out how to solve it.
Could anyone be kind enough to shed some light on this?
Thank you in advance
InGaAsP