PN junction - advanced modeling


by Enialis
Tags: advanced, junction, modeling
Enialis
Enialis is offline
#1
Dec7-12, 08:09 AM
P: 10
Hello, let's start with a standard question:

1) A silicon diode has been characterized and as result we have a built-in potential of 0.53 V and a zero-bias capacitance of 1.3 mF/m^2. Assuming an abrupt junction (the measured grading coefficient is 0.5!) what are the respective doping levels on the p and n side? I don't find any real value that satisfies this condition...so how is it possible in a real device to have this values?

Now the non-standard:

2) In a p-n junction with linearly graded profiles anyone knows about the space charge region at equilibrium. What happen during a biasing? What about the electric fields inside the semiconductor?

3) How to use the result of a PN junction for the real 3D structure? I mean...what is considered as "Area" and what as "p-side length" or "n-side length" assuming a parallelepiped diffusion?

Any discussion is really appreciated.
Thank you
Phys.Org News Partner Physics news on Phys.org
Chameleon crystals could enable active camouflage (w/ video)
Atomic switcheroo explains origins of thin-film solar cell mystery
X-ray laser experiment explores how specially shocked material gets stronger

Register to reply

Related Discussions
Advanced Physics or Intro Physics? (Please read before posting in Advanced Physics) Advanced Physics Homework 1
P-N junction Engineering, Comp Sci, & Technology Homework 5
pn junction Introductory Physics Homework 0
transistors-Why can't a pn junction and np junction in series be a pnp transistor? Atomic, Solid State, Comp. Physics 3
p-n junction Classical Physics 6