Depletion Region shrinks with increased temperature

In summary, the depletion region width in a PN junction decreases with an increase in temperature because the density of charge carriers is increasing. This is due to the fact that the applied voltage determines the amount of charge stored in the junction and the cross sectional area is fixed. However, the density of charge carriers is primarily determined by the density of dopant atoms, resulting in little change in depletion width with temperature. As for the junction capacitance, it is expected to increase with temperature due to the decrease in depletion width. However, the change in capacitance with temperature may not be significant.
  • #1
jaxper
1
0
Hi,

Quick question. In a PN junction, the depletion region will shrink with an increase in temperature. Why is that? Is the Fermi energy of the p and n semiconductors a function of temperature?

Thanks!

Jax
 
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  • #2
If the depletion region width shrinks as temperature increases its because the density of carriers is increasing.

The applied voltage determines the amount of charge stored in the junction. The cross sectional area is fixed so the depletion width is whatever value is needed so the area of the region times the number of charge carriers per cm^3 equals the required charge. If the density of charge carriers increases, then less width is required to store the required charge.

In actual practice though, the density of charge carriers is determined by the density of dopant atoms over a broad range of temperatures (say 100 K to 350 K). So there should be very little change in depletion width with temperature.
 
  • #3
junction capacitance with inc. temp

Hello,
Based on mmwave's answer that PN junction depletion width decreases with temperature (I assume junction is reverse biased), then will junction capacitance therefore increase with temperature? If so, is there any appreciable change in capacitance with temperature?
Thx
 

1. How does temperature affect the depletion region?

As temperature increases, the depletion region in a semiconductor device shrinks. This is due to the increased thermal energy causing more minority carriers (electrons or holes) to be present, which in turn neutralizes the majority carrier charge within the depletion region.

2. Why does the depletion region shrink with increased temperature?

The depletion region is created by the difference in doping concentrations between the p-type and n-type regions in a semiconductor device. As temperature increases, more minority carriers are present, reducing the difference in doping concentrations and shrinking the depletion region.

3. What is the significance of the depletion region in a semiconductor device?

The depletion region plays a crucial role in controlling the flow of current in a semiconductor device. It acts as a barrier between the p-type and n-type regions, preventing the majority carriers from crossing over and allowing for the device to switch between conducting and non-conducting states.

4. Is the depletion region affected by temperature in all semiconductor devices?

Yes, the depletion region is present in all semiconductor devices and is affected by temperature. However, the extent of the shrinking may vary depending on the specific materials and design of the device.

5. Can the depletion region be controlled by changing the temperature?

Yes, the depletion region can be controlled by changing the temperature. Lowering the temperature will increase the size of the depletion region, while raising the temperature will shrink it. This can be utilized in certain applications to adjust the behavior of the semiconductor device.

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