RBS Spectrometry Analysis of Si3N4 on Si: SiO2 or SiOxNy?

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In summary, the Si3N4 thin film deposit on a Si substrate was analyzed using spectrometry to obtain a scattering yield spectrum. The results showed that there was a change in the scattering yield profile when the film was oxidized. The new thin film was found to be Si/Si3N4/SiO2 or Si/Si3N4/SioxNy depending on the duration of the oxidation process. The conditions during oxidation were not known, but it is likely that it is an epitaxial oxidation on a previously grown nitride film.
  • #1
physicist888
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hi all
its an RBS ( rutherford back scattering) experiment. a Si3N4 thin film deposit on a Si substrat. we make a spectrometry analysis, and we obtain the scattering yield spectrum.
now back to chemistry, if we made an oxydation for this thin film while it deposite on the substrat, we'r going to obtain a new thin film of: SiO2 or SiOxNy ? and why?

i can't really solve this question. its really a chemistry question, maybe its about electronegativity of elements.
 
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  • #2
the new thin film obtained ( SiOxNy or SiO2 ) is deposite on the previous thin film Si3N4.
to be clear, before oxydation : Si/ Si3N4
after oxydation: Si/Si3N4/SiO2 or Si/Si3N4/SioxNy ?? and for which reason??
 
  • #3
none know about this?
 
  • #4
What are the conditions during oxidation? We need you to describe the oxidation process in more detail. Is this epitaxial oxidation on a previously grown nitride film? Also, we need a more complete description of the sample and its processing.

Silicon nitride, in general is pretty resistant to oxidation up to moderate temperatures. Above many hundreds of degrees C, the primary mode of oxidation is grain boundary diffusion. Of course, this doesn't apply to thin films.
 
  • #5
actually, we have first Si/Si3N4 ( substrat/thin film) . then the Si3N4 is deposed under a oxygen flux ( Epitaxial). then a new structure will shown, and that's depends for the duration of oxydation. the question is wer're going to obtain which of the two structures mentioned below??
 
  • #6
maybe I am going to scan the figure and depose it. is that possible to put figures in the forum??
 
  • #7
Yes, it is possible. Click the "Go Advanced" option below the Quick Reply box, then click on "Manage Attachments" found below the Reply window (under Additional Options).
 
  • #8
okay, i didnt scan it yet. tomorrow ill post it
 

1. What is RBS spectrometry analysis?

RBS (Rutherford Backscattering Spectrometry) is a technique used to analyze the composition and structure of materials. It involves bombarding a sample with high-energy ions and measuring the energy and angle of the ions that are scattered back from the surface. This provides information about the elements present and their depth distribution within the sample.

2. Why is RBS spectrometry used to analyze Si3N4 on Si: SiO2 or SiOxNy?

RBS is particularly useful for analyzing thin films and interfaces, making it a suitable technique for studying the Si3N4 layer on Si substrates with SiO2 or SiOxNy layers. It can provide information about the composition, thickness, and crystallinity of these layers, which is important in understanding their properties.

3. What is the advantage of using RBS over other analytical techniques?

RBS offers several advantages over other techniques, such as its high sensitivity for light elements, non-destructive nature, and ability to provide depth profiles. It is also a relatively fast and accurate method for analyzing a wide range of materials, making it a popular choice in many industries and research fields.

4. How is RBS spectrometry performed?

RBS spectrometry involves bombarding the sample with a beam of ions, typically helium or hydrogen, and measuring the energy and angle of the scattered ions. This data is then analyzed to determine the elemental composition and depth distribution within the sample. The process is usually carried out in a vacuum chamber using specialized equipment.

5. What are the limitations of RBS spectrometry analysis?

While RBS is a powerful analytical technique, it does have some limitations. It is only suitable for solid samples and cannot provide information about the chemical state of elements. Additionally, the accuracy of the results can be affected by factors such as sample surface roughness and ion beam damage. Therefore, it is often used in conjunction with other techniques to obtain a more complete understanding of the sample's composition.

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