Potential barrier of Silicon Diode

In summary, the potential barrier of a silicon diode is typically 0.7V at normal temperature. However, if the temperature is increased to 120 degrees Centigrade, the potential barrier may either increase, decrease, or remain the same. The exact change in the potential barrier can be determined using the Diode Equation, which relates the voltage, current, and temperature of the junction. This equation can be found in textbooks or online resources. The answer to this question may vary depending on the specific conditions and materials involved.
  • #1
otomanb
59
0
As we know the potential barrier of silicon diode is 0.7V at "Normal Temperature"
But if the Temperature is 120 degree Centigrade then what will happen?


1) the Potential Barrier will increase
2) Decrease
3) Remain Same

Please Explain also!
 
Last edited:
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  • #2
otomanb said:
As we know the potential barrier of silicon diode is 0.7V at "Normal Temperature"
But if the Temperature is 120 degree Centigrade then what will happen?


1) the Potential Barrier will increase
2) Decrease
3) Remain Same

Please Explain also!

The relevant equation is the "Diode Equation", relating the voltage, current and temperature of the junction. Can you write out that equation for us, and tell us the answer to your question?

If you don't see the Diode Equation in your textbook, you can find it at wikipedia.org, or with a Google search.
 
  • #3
sorry !:confused:
I don't have any equation. I found this question in ECAT(Engineering College Admition Test Book).
And it was just a MCQs
 

What is a potential barrier in a silicon diode?

A potential barrier in a silicon diode is a region where there is a difference in energy levels between the P-type and N-type semiconductor materials. This difference creates an electric field that prevents the flow of current in one direction.

How does a potential barrier affect the behavior of a silicon diode?

A potential barrier in a silicon diode acts as a one-way valve for electric current. It allows current to flow easily in one direction (from the P-type to N-type material) while resisting current flow in the opposite direction.

What causes a potential barrier to form in a silicon diode?

The formation of a potential barrier in a silicon diode is due to the difference in energy levels between the P-type and N-type materials. This difference is created during the manufacturing process through the addition of impurities to the silicon crystal.

Can the potential barrier in a silicon diode be changed?

Yes, the potential barrier in a silicon diode can be changed by applying a reverse bias voltage. This increases the strength of the electric field, making it more difficult for current to flow in the forward direction.

What is the significance of the potential barrier in a silicon diode?

The potential barrier in a silicon diode is crucial for its function as a semiconductor device. It allows for the controlled flow of electric current, making it useful in electronic circuits for rectification, switching, and amplification.

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