Level Broadening at interfaces

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In summary, level broadening at interfaces is the smearing out of energy levels at the interface between two materials, caused by the interaction between their electrons. This can affect the electronic properties of materials and the performance of nanoscale devices, and can be controlled through various methods. It also poses challenges for material characterization, requiring specialized techniques to accurately study the electronic properties.
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collpitt
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Dear all,
I have a question regarding electronic transport in a device with length smaller than the phase relaxation length.
Consider a coherent device with an interface in the middle. The interface would act as a scatterer and the electron distribution across the interface would be non-uniform. Will this non-uniform distribution dictate a level broadening near the vicinity of the interface?

Please answer the question/post some references!

Thank you
 
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  • #2
I should think that it would.

You should be able to find articles/references with appropriate queries via Google Scholar.
 

1. What is level broadening at interfaces?

Level broadening at interfaces refers to the phenomenon where the energy levels of electrons at the interface between two materials become smeared out, instead of remaining discrete energy levels. This can affect the electronic properties of the materials and is an important consideration in nanoscale devices.

2. What causes level broadening at interfaces?

Level broadening at interfaces is caused by the interaction between the electrons on either side of the interface. When two materials are brought into close proximity, the electrons from one material can interact with the electrons from the other material, resulting in a broadening of the energy levels at the interface.

3. How does level broadening at interfaces affect device performance?

Level broadening at interfaces can affect the performance of nanoscale devices in several ways. It can change the conductivity, band gap, and other electronic properties of the materials, which can impact the device's functionality. It can also lead to increased energy dissipation, reducing the overall efficiency of the device.

4. Can level broadening at interfaces be controlled?

Yes, level broadening at interfaces can be controlled through various methods, such as using different materials with different electronic properties, adjusting the distance between the materials, and applying external electric or magnetic fields. These methods can help reduce or enhance level broadening at interfaces, depending on the desired outcome.

5. How does level broadening at interfaces impact material characterization?

Level broadening at interfaces can make it challenging to accurately characterize the electronic properties of materials, as it can obscure the distinct energy levels that would normally be observed. Specialized techniques, such as angle-resolved photoemission spectroscopy, are often used to study level broadening at interfaces and extract meaningful information about the electronic properties of the materials.

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