The resistivity of doped Si, or silicon, varies depending on the type and concentration of dopants present. Generally, doped Si has a lower resistivity compared to pure Si due to the presence of free charge carriers from the dopants.
Doping introduces impurities into the crystal lattice of Si, creating free charge carriers that can move through the material. This increases the conductivity of Si and decreases its resistivity.
The most common types of dopants used in Si are boron, phosphorus, arsenic, and antimony. These dopants introduce either positive (p-type) or negative (n-type) charge carriers into the Si crystal lattice.
The unit of measurement for resistivity is ohm-meter (Ω·m). It is a measure of the material's resistance to electrical current flow.
As temperature increases, the resistivity of doped Si also increases. This is because higher temperatures cause the dopants to become more mobile and disrupt the crystal lattice, making it more difficult for charge carriers to move through the material.