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sarah1
- 6
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at the metal semiconductor contact the transport of minority carriers is describe by surface recombination velocity, what s the surface recombination velocity for electron and hole at the same contact?
Surface recombination velocity of electron is a measure of how quickly electrons are lost at the surface of a material. It is an important parameter in the study of semiconductors and other materials used in electronic devices.
Surface recombination velocity of electron is typically measured using techniques such as photoluminescence, time-resolved photoluminescence, and microwave photoconductance decay. These methods involve shining light or microwaves on the surface of the material and measuring the resulting electron emission.
Several factors can influence the surface recombination velocity of electron, including the material properties (such as doping concentration and defect density), surface conditions (such as roughness and contamination), and external factors (such as temperature and light intensity).
Surface recombination velocity of electron plays a crucial role in determining the efficiency and performance of electronic devices. High surface recombination velocity can lead to a decrease in device performance and reliability, while low surface recombination velocity is desirable for efficient device operation.
The surface recombination velocity of electron can be controlled through various methods, such as surface passivation techniques, surface treatments, and material engineering. These methods aim to reduce surface defects and improve the surface quality of the material, thereby decreasing the surface recombination velocity of electron.