Thermal conductivity - doped silicon

In summary, the thermal conductivity of single crystal silicon at normal temperatures is weakly dependent on doping, with a range of values from 149-157 W/m-K. The thermal conductivity of doped silicon with boron at room temperature can be estimated using calculations from a patent, which suggest a value of 147 W/m-K with negligible variation due to boron doping. This supports the idea that electronic thermal conductivity is small compared to lattice thermal conductivity in single crystal silicon at room temperature.
  • #1
lycoss
3
0
I 'trying to find the thermal conductivity of a silicon substrate doped with boron with known dopant concentration. Is there any way to calculate it or it has to be measured.

Thanks in advance for any advice.
 
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  • #2
You may already know this, but the thermal conductivity of single crystal silicon at normal temperatures is only weakly dependent on doping. The dependence is probably less than the measurement error (I typically see values ranging from 149-157 W/m-K). How precise an answer do you need?
 
  • #3
I want to know the conductivity of doped silicon with boron at room temperature. An estimation would be wright too. I have to different concentrations of boron, one of 8e18 (cm-3) and one of 1,2e15 (cm-3).
Thanks in advance
 
  • #4
According to the calculations http://www.patentstorm.us/patents/7202146/description.html" (which you may or may not believe), the thermal conductivity at 22°C is 147 W/m-K, and the variation due to boron doping is negligible (<1 W/m-K). This agrees with the idea that electronic thermal conductivity is small compared to lattice thermal conductivity in single crystal silicon around room temperature.
 
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1. What is thermal conductivity?

Thermal conductivity is a measure of a material's ability to conduct heat. It is typically measured in watts per meter-kelvin (W/mK) and represents the rate at which heat is transferred through a material.

2. How is thermal conductivity of doped silicon different from regular silicon?

Doped silicon is a type of silicon that has been intentionally mixed with small amounts of other elements, known as dopants. These dopants alter the electrical and thermal properties of silicon, including its thermal conductivity. Generally, doped silicon has a higher thermal conductivity than regular silicon.

3. What are the factors that affect thermal conductivity of doped silicon?

The thermal conductivity of doped silicon can be affected by a variety of factors, including the type and concentration of dopants, temperature, and crystal structure. Additionally, impurities and defects in the material can also impact its thermal conductivity.

4. How can thermal conductivity of doped silicon be measured?

Thermal conductivity of doped silicon can be measured using various techniques, such as the hot disk method, transient plane source technique, or laser flash analysis. These methods involve applying a known amount of heat to the material and measuring the temperature change across it to calculate its thermal conductivity.

5. What are the applications of doped silicon with high thermal conductivity?

Doped silicon with high thermal conductivity has various applications in the electronics industry, including as a heat sink material for computer chips and other electronic devices. It is also used in the production of solar cells, as well as in thermoelectric devices for converting waste heat into electricity.

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