PN junction diode barrier potential attracted to free electrons or holes?

In summary: The force between the ions is stronger than the force between the free carriers and the ions, which explains why the barrier potential exists. The equal and opposite charges in the depletion layer do cancel each other's electric field effect, but this does not eliminate the barrier potential as it is a result of the majority carriers being unable to diffuse across the junction. In summary, the barrier potential in a PN junction diode arises due to the majority carriers being temporarily trapped in potential wells and unable to diffuse across the junction, resulting in a stronger force between the ions and the barrier potential remaining in place.
  • #1
Ubaidsaleem
1
0
I am wondering about the barrier in PN junction diode.Due to diffusion negative ions are formed on the P side and Positive ions are formed on the N side of the diode.both opposite sides exert force of attraction and so a line of positive ions and negative ions align along the junction.
The question is as free electrons remaining in the N region and also the holes in the P region left behind in the P region.Why these carriers are not attracted so electrons from the N side neutralize the positive ions in the N region and so as the holes in the P region.

Why the force is existing between the ions and not between the free electrons and the positive ions.

Second my question is why there is a barrier potential? When opposites and equal charges present in the depletion layer should cancel their electrostatic or electric field effect?
 
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  • #2
The barrier in a PN junction diode arises due to the fact that the majority carriers on each side of the diode (electrons in the N-region and holes in the P-region) are not free to move across the junction. This is because when an electron on the N-side diffuses over to the P-side, it will be attracted to the positive ions which were created as a result of diffusion and will be temporarily trapped in a potential well. Similarly, when a hole on the P-side diffuses to the N-side, it will be attracted to the negative ions and will be temporarily trapped in a potential well. This means that the majority carriers on either side of the diode will be unable to diffuse across the junction and the barrier potential will remain in place.
 

1. What is a PN junction diode?

A PN junction diode is a semiconductor device that is formed by combining a P-type semiconductor and an N-type semiconductor. This combination creates a depletion region, or barrier, between the two types of semiconductors. This barrier allows the diode to control the flow of electric current in a circuit.

2. How is the barrier potential of a PN junction diode determined?

The barrier potential of a PN junction diode is determined by the difference in the work function of the two semiconductors. The work function is the minimum amount of energy needed to remove an electron from the surface of a material. The type of dopants used in each semiconductor also plays a role in determining the barrier potential.

3. What happens to the barrier potential when a diode is forward biased?

When a diode is forward biased, the voltage applied to the diode is in the same direction as the built-in potential, reducing the size of the depletion region and allowing electric current to flow through the diode. This results in a decrease in the barrier potential.

4. How does the barrier potential affect the flow of current in a PN junction diode?

The barrier potential acts as a barrier to the flow of current in a PN junction diode. This means that a diode will only allow current to flow in one direction, from the P-type semiconductor to the N-type semiconductor. The size of the barrier potential determines the amount of voltage needed to overcome it and allow current to flow.

5. Can the barrier potential be changed?

Yes, the barrier potential of a PN junction diode can be changed by altering the doping levels of the semiconductors or by applying an external voltage to the diode. This allows for the control of the diode's behavior and allows it to be used in various electronic applications.

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