Questions about common emmitter, phase splitter

[faen]

Homework Statement

Hi, I have a test and need to prepare with the following questions. Unfortunately, we don't have any material to read in order to prepare. I was hoping that somebody could please help me answer at least some of these questions, or provide me with a source where I can find the answers. I've tried to google the relevant concepts but I still can't find any more answers. Thanks in advance for any help, it would be very appreciated..

4. What is the cause of the voltage droop? (this question is related to common emitter or asymmetrical amplifiers)

5. What is the relation between rise time and high limit frequency?

6. What is the relation between the low limit frequency and the voltage droop?

9. How can be determined the operation point of the transistor in a common emitter / collector / base configuration in case of a single supply or a double supply?

10. How to calculate the conduction (g) and hybrid (h) parameters from the operation point data of the transistors?

11. How to calculate the voltage gain, the input resistance and the output resistance of the basic transistor amplifiers if the g or h parameters of the transistor are known?

15. How to calculate the voltage gain, the input resistance and the output resistance of the basic transistor amplifiers if the g or h parameters of the transistor are known?

16. Draw the high frequency hybrid π equivalent circuit of the bipolar transistors, and knowing the operation point data calculate the value of the components in it.

17. What does it mean „physical parameter”?

18. What is the effect of the emitter resistance on the high frequency time constants?

20. What is the effect of the emitter capacitance on the Bode plot of the common emitter amplifier?

Homework Equations

The Attempt at a Solution

 

[Valkarie]

4. The cause of voltage droop in common emitter or asymmetrical amplifiers is an increase in the collector current, which causes a decrease in the base-emitter voltage. This decreases the gain of the amplifier and can create a voltage droop. 5. The relation between rise time and high limit frequency is that the higher the rise time, the lower the high limit frequency. The high limit frequency is the frequency at which the amplitude response begins to roll off. 6. The relation between the low limit frequency and the voltage droop is that the lower the low limit frequency, the more severe the voltage droop. The low limit frequency is the frequency at which the amplitude response begins to roll off. 9. The operation point of the transistor in a common emitter / collector / base configuration can be determined in a single supply or a double supply by calculating the quiescent current and the quiescent voltage. The quiescent current is the collector current when bias voltage is applied to the base of the transistor and the quiescent voltage is the collector voltage when the transistor is conducting. 10. The conduction (g) and hybrid (h) parameters of a transistor can be calculated from the operation point data of the transistors by using the formula g = Ic/Vbe and h = Vce/Ic. 11. The voltage gain, the input resistance and the output resistance of the basic transistor amplifiers can be calculated if the g or h parameters of the transistor are known by using the formulas Av = -gmRin and Rout = (1+gm*Rl)/hfe. 15. The voltage gain, the input resistance and the output resistance of the basic transistor amplifiers can be calculated if the g or h parameters of the transistor are known by using the formulas Av = -gmRin and Rout = (1+gm*Rl)/hfe. 16. The high frequency hybrid π equivalent circuit of the bipolar transistors consists of two capacitors in series with a resistor in parallel with each capacitor. The value of the components in it can be calculated by knowing the operation point data of the transistors, such as the quiescent current and the quiescent voltage. 17. A physical parameter is