Breakdown Voltage of PN Junctions: P+-N vs. N+-P

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In summary, the conversation discusses the breakdown voltage of pn junction diodes and asks which diode out of a p+-n diode and an n+-p diode would have a higher breakdown voltage given the same design parameters. The notation for the diodes is clarified to be p+n for a high voltage rectifier made of p-type silicon and n+ for a high voltage rectifier made of n-type silicon. The + sign indicates a high concentration of doping atoms (such as boron or phosphorous) in the silicon.
  • #1
Fermi_98
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Hiya,
Being a computer science and eng first year student, just trying to understand one artical regarding Breakdown voltage of a pn junction.Could anybody explain me, which diode out of the following have higher breakdown voltage if they have same design parameters such as doping and thickness and why ?
1. p+-n diode
2. n+-p diode
 
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  • #2
Fermi_98 said:
Hiya,
Being a computer science and eng first year student, just trying to understand one artical regarding Breakdown voltage of a pn junction.Could anybody explain me, which diode out of the following have higher breakdown voltage if they have same design parameters such as doping and thickness and why ?
1. p+-n diode
2. n+-p diode

Can you clarify your diode notation. It seems ambiguous.

Chris
 
  • #3
I suppose, i should have rather written as p+nn+. If you are familiar with power rectifiers, it is quite common notation used in there, to denote the high voltage rectifier.
High voltage rectifiers are fabricated in silicon which is either n-type or p-type.

1. "p" refers to quantity of the p-type semiconductor for instance boron etc. The + sign shows that boron atoms concentration, we are talking is in the order of greater then 1e18 cm-3 .This much of the boron atom concentration is diffused into the n type silicon to make a rectifier. It is therefore denoted by p+n.

2. like wise "n " refers to n-type semiconductor for instance phosphorous etc. Again, when the doping concentration is very high, we denote it by n+.

so same is applicable to other type of the rectifier for instance n+pp+.
 

1. What is the breakdown voltage of a PN junction?

The breakdown voltage of a PN junction is the voltage at which the junction experiences a significant increase in current flow due to the breakdown of the depletion region.

2. What is the difference between P+-N and N+-P junctions in terms of breakdown voltage?

The main difference between P+-N and N+-P junctions is the direction of current flow. In a P+-N junction, the current flows from the P-type region to the N-type region, while in a N+-P junction, the current flows from the N-type region to the P-type region. The breakdown voltage for a P+-N junction is typically higher than that of a N+-P junction.

3. How does doping affect the breakdown voltage of a PN junction?

Doping refers to the intentional addition of impurities to a semiconductor material to create regions of different conductivity. In a PN junction, doping levels can affect the width of the depletion region, which in turn affects the breakdown voltage. Higher doping levels in the P or N regions can result in a lower breakdown voltage.

4. What are some factors that can affect the breakdown voltage of a PN junction?

The breakdown voltage of a PN junction can be affected by several factors, including the doping levels in the P and N regions, the width of the depletion region, and the material properties of the semiconductor. Temperature and the amount of current flowing through the junction can also impact the breakdown voltage.

5. Why is the breakdown voltage important in the design of electronic devices?

The breakdown voltage of a PN junction is an important parameter in the design of electronic devices because it determines the maximum voltage that the device can safely handle before experiencing a significant increase in current flow. This is crucial in preventing damage to the device and ensuring its proper functioning. Different devices may require different breakdown voltages depending on their intended use and application.

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