Carrier injection in p-i-n diodes

[InGaAsP]

Hello all

I have a p-i-n diode structure. I am applying a forward bias to diode, so that holes from p region, and electrons from n region are injected inside the i region.
Now, I need to find a relationship between the applied bias/current vs the number of holes and electrons that are injected inside the i region.
The starting point is from the drift diffusion equations of P-N diode, but however, I am unable to figure out how to solve it.
Could anyone be kind enough to shed some light on this?

Thank you in advance

InGaAsP

 

[BigJDubs]

PIN diodes are semiconductor devices that use the injection of holes from a p-type region, and electrons from an n-type region, to create a current flow through an intrinsic (i-type) region. The current is a result of the drift of electrons and holes in the direction of the applied electric field. The current is also affected by the diffusion of the carriers, which is caused by the concentration gradient of the carriers. The current flowing through the diode can be expressed as a function of the applied voltage and the diffusion coefficient.