Can Intraband Transitions Produce Holes in the Conduction Band of Metals?

In summary, intraband transition in metals does not produce holes in the conduction band, as the concept of holes is related to a missing electron in the valence band which does not exist in metals. The electrons in the conduction band are free and can contribute to conduction without having to transition to another band. When an electron is removed, the hole will quickly relax and be scattered near the Fermi surface, but this kind of hole behaves differently than holes in the valence band and does not result in charge separation. These holes are also important in the formation of superconductors.
  • #1
hokhani
483
8
Could intraband transition (in metals) of an electron in the conduction band produce a hole there?
 
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  • #2
The hole concept is related to a missing electron in the valence band. The valence band of a metal is completely filled and the electrons in the conduction band are FREE to begin with.

Therefore, there is no such thing as a hole in metals.
 
  • #3
Ok, but as far as I know, the hole at the point k is a concept which is contributed to the electron at the point -k. Until the electron at k is not removed, its effect is neutralized by the electron at -k but if it is removed, the electron at -k participates in conduction which its conduction is attributed to the hole at k. This situation could happen in the conduction band as if we have one electron at k and another at -k and if the electron at k moves to any different state, why we wouldn't have the hole at k?
 
  • #4
because an electron state in a metal conduction band has a de-localized wave function. It can contribute to conduction without having to transition to another band as in a semiconductor. Of course, it is more intersting to ask what happens when an electron is removed as in photoelectric effect.. do you see a creation of a hole? No.. because the valance band is completely filled and
 
  • #5
hokhani said:
Could intraband transition (in metals) of an electron in the conduction band produce a hole there?

Yes, but the hole, like the excited electron, will quickly relax and be scattered to the vicinity of the Fermi surface. They behave differently than holes in the valence band in so far as their effective mass is negative. As their charge is also positive (that of the electron being negative), they will move in an applied field in the same direction as the electrons, so there won't be a charge separation as in a semi-conductor.

These kind of holes are also important in the formation of superconductors.
 

What is an intraband transition?

An intraband transition refers to the movement of an electron within the same energy band in a material. This can occur when an electron absorbs or emits energy, resulting in a change in its energy level within the same band.

What is the significance of intraband transitions?

Intraband transitions play a crucial role in the behavior and properties of materials, particularly in semiconductors. These transitions can affect the conductivity, optical properties, and other characteristics of a material.

What is a hole in terms of intraband transitions?

In the context of intraband transitions, a hole is a vacant state in the valence band of a material. It is created when an electron transitions to a higher energy level, leaving behind an empty space in the valence band.

How do intraband transitions differ from interband transitions?

Intraband transitions occur within the same energy band, while interband transitions involve movement between different energy bands. Additionally, intraband transitions typically involve a change in electron momentum, whereas interband transitions involve a change in both energy and momentum.

What is the role of intraband transitions in optoelectronic devices?

Intraband transitions are essential in optoelectronic devices, such as solar cells and LEDs. They allow for the absorption and emission of light, which is crucial for the functioning of these devices. Furthermore, the energy levels and properties of intraband transitions can be controlled to optimize the performance of these devices.

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