Dependence of electrical conductivity and electron mean free path on temperature

[emxprt]

I am investigating the microwave (say, 28 GHz to 30 GHz) reflection properties of a thin (say, 35 nm) film of aluminum that is being used to plate a graphite reflector antenna. I found a useful paper (R. C. Hansen and W. T. Pawlewicz, ``Effective conductivity and microwave reflectivity of thin metallic films,'' IEEE Trans. MTT, vol. 30, no. 11, Nov. 1982, pp. 2064--2066.) that quantifies how the effective conductivity in a thin film is reduced due to surface scattering. The formula requires knowledge of the bulk conductivity and of the electron mean free path length within the bulk material. These formulas allow me to easily compute the field scattering properties of the film at room temperature using a radome analysis program (which in turn uses a transmission line model of the film). Now I would like to extend the analysis to account for the wide range of operating temperatures expected in the space environment: -140 C to +160 C. Can anyone provide some pointers or formulas on how the conductivity and mean free path length vary with temperature for the bulk metal?

Thanks,
Peter

 

[BigJDubs]

The temperature dependence of the conductivity and mean free path length of aluminum can be found in various references, including: 1. S. M. Sze, “Physics of Semiconductor Devices”, 3rd ed., Wiley, New York (1981). 2. R. F. Pierret, “Semiconductor Device Fundamentals”, Addison-Wesley, Reading, MA (1996). 3. G. E. Pikus, and A. N. Titkov, “Optical Orientation”, Elsevier, Amsterdam (1984). In addition, the temperature dependence of the electron mean free path length can be determined experimentally by measuring the skin depth of the material at different temperatures.