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datnguyen2007
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Homework Statement
An MOS device has a following high-frequency C-V curve. The oxide thickness is 15nm. THe silicon doping is 3x10^17 cm^-3. Neglect interface charge.
a) drawt the band diagram (include the gate electrode and gate oxide, label Fermi levels) at bias point where Vg=0 (point A)
b)if the capacitance C at point A is 1/2 of the oxide capacitance, what is the surface potential (band bending) at A?