Measurement of capacitance of dielectric film using front contants

[capMeasure]

Hi,

I have deposited a film of dielectric on SiO2 substrate. Then, deposited metal dots on the top of dielectric film to measure electrical properties. I want to measure capacitance using metal dots on the top of dielectric. Since I have SiO2 as a substrate, I can not make a parallel plate capacitance measurement. But someone told me, it is possible to calculate capacitance using only front contacts (two metal dots). It will be very helpful if someone can give a reference to book or article.

Thanks.

 

[eljose79]

Hello,

Thank you for your post. It is possible to measure capacitance using only front contacts (metal dots) on a dielectric film on a SiO2 substrate. This method is known as metal-insulator-metal (MIM) capacitance measurement. The principle behind this measurement is that the metal dots act as the two plates of a capacitor, with the dielectric film acting as the insulator between them. By applying a voltage to the metal dots, an electric field is created in the dielectric film, which can then be measured to determine the capacitance.

There are several books and articles that discuss MIM capacitance measurement, including "Handbook of Thin Film Dielectric Capacitors" by C. K. Maiti and "Capacitance Measurements in Dielectrics" by J. W. P. Hsu. I recommend consulting these resources for more detailed information on the theory and techniques of MIM capacitance measurement.

Additionally, there are various techniques and instruments available for measuring MIM capacitance, such as scanning capacitance microscopy and impedance analyzers. It is important to carefully select the appropriate method and instrument for your specific experiment and sample.

I hope this information helps. Best of luck with your research!