Ion implantation on a target

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In summary, the conversation discusses the difficulty of implanting Fe3+ ions without also contaminating the target with Fe2+ or Fe+. The solution proposed is using a final energy magnet to strip any energy contamination from the beam, but this may not be feasible for plasma implantation methods.
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Panthera Leo
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This question might sound very simple, but I couldn't find a relevant answer by googling;

Assume Fe3+ is to be implanted in some target, how to get the 3+ ions to be implanted and not the 2+ or 1+ ?

Thanks for your contributions.
 
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  • #2
Panthera Leo said:
This question might sound very simple, but I couldn't find a relevant answer by googling;

Assume Fe3+ is to be implanted in some target, how to get the 3+ ions to be implanted and not the 2+ or 1+ ?

Thanks for your contributions.

First, I cannot imagine you implanting iron because it contaminates anything in an implanter that it touches (and it's ferrous).

However, you would need a final energy magnet at an angle that strips any energy contamination from the beam. Your analyzer magnet would do most of that, but you would pick up neutral contaminants (your bigger problem) and those along with the energy contaminants (+ and ++) would be filtered in the FEM.

Hope this helps.

If you are talking about plasma implantation with HV to a target, you cannot control the energy level that well, which is why diffusion style doping is ok for coating substrates, but not for controlling depth of implant or for voltage threshold adjust type applications.
 

What is ion implantation on a target?

Ion implantation on a target is a process in which ions are accelerated and directed onto a solid surface, typically a semiconductor material. This causes the ions to embed themselves into the surface, altering its physical and chemical properties.

What is the purpose of ion implantation on a target?

The purpose of ion implantation on a target is to introduce specific ions into the material in order to modify its properties. This can include changing its electrical conductivity, hardness, or optical properties.

How does ion implantation differ from other methods of material modification?

Unlike other methods such as chemical or physical vapor deposition, ion implantation allows for precise control over the depth and concentration of the implanted ions. It also does not require high temperatures, making it suitable for materials that are sensitive to heat.

What types of materials can be used as targets for ion implantation?

Most commonly, semiconductor materials such as silicon, gallium arsenide, and germanium are used as targets for ion implantation. However, other materials such as metals and insulators can also be implanted with ions.

What are the potential applications of ion implantation on a target?

Ion implantation has a wide range of applications, including semiconductor fabrication, surface modification of materials for improved wear resistance or biocompatibility, and doping of materials for electronic devices.

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