Microelectronic Circuits

ashkash

1. The problem statement, all variables and given/known data

A GaN semiconductor (EG=3.45 eV, intrinsic concentration is ni=1e-14 cm-3) is initially barely doped n-type so that the electron concentration is 1 electron/cm3. Acceptors are added to the material. How far (in energy) and in what direction (in energy) must the fermi energy move
to result in 1 hole per cm3.


2. Relevant equations



3. The attempt at a solution

I do not even know where to begin. Any help would be appreciated. thanks.