
#1
Feb607, 03:35 PM

P: 32

1. The problem statement, all variables and given/known data
A GaN semiconductor (EG=3.45 eV, intrinsic concentration is ni=1e14 cm3) is initially barely doped ntype so that the electron concentration is 1 electron/cm3. Acceptors are added to the material. How far (in energy) and in what direction (in energy) must the fermi energy move to result in 1 hole per cm3. 2. Relevant equations 3. The attempt at a solution I do not even know where to begin. Any help would be appreciated. thanks. 


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