Feb6-07, 03:35 PM
1. The problem statement, all variables and given/known data
A GaN semiconductor (EG=3.45 eV, intrinsic concentration is ni=1e-14 cm-3) is initially barely doped n-type so that the electron concentration is 1 electron/cm3. Acceptors are added to the material. How far (in energy) and in what direction (in energy) must the fermi energy move
to result in 1 hole per cm3.
2. Relevant equations
3. The attempt at a solution
I do not even know where to begin. Any help would be appreciated. thanks.
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