|Feb18-09, 11:09 PM||#1|
determine the impurity doping concentration
I have a question on semiconductor device,,
A drift current density of Jdrf=150 A/cm2 is required in a semiconductor device using n-type silicon with an applied electric field of E=25V/cm. Determine the imjpurit doping concentration that will achieve this specification.
i don't really understand this topic, can someone help me plz..
the answer is, If Nd = 3.13 * 10power 16 per cmcube,, then impurity doping concentration will be 1200..
i don't know how can i find Nd..
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