1. The problem statement, all variables and given/known data 2. Relevant equations How current flows through n channel mosfet since bassicaly by applying positive voltage to the drain and negative to the substrate we actualy make the depletion layer grow widher. I mean when there is positive voltage at the gate it attracts electrons and thus creating a layer underneath the gate and between S and D that is depleted of mobile charges. And the drain is also reverse biased. 3. The attempt at a solution Is there some kind of drift current from S to D like in the bjts?