Hi At the moment I am trying to make a field effect transistor on a SOI wafer. The plan is to omit the top gate in order to get a backgate configuration. Besides making the transistor I would also like to calculate the IV characteristic of such a devices structure. I am familiar with the calculation of the IV characteristic of a MOSFET structure when using the gradual channel approximation. However, I have tried to use the same procedure on the backgate structure, but I have some problems with the new semiconductor/air interface. Is there any one that has tried to calculate the IV characteristic of a backgate structure using the gradual channel approximation?