When a n-type semiconductor is brought into contact with a metal, then alignment of the chemical potentials of both systems leads to band bending within the depletion layer, e.g on the semiconductor side. does the amount of band bending (change of potential) also depend on the donor concentration? The Schottkey model says, that the band bending only depends on the metals workfuction and the affinity of the semiconductor. But the chemical potential of a semiconductor depends on the donor concentration. So the amount of potential change should depend also on the Donor concentration?