(a)If a silicon crystal is doped with 10^15 cm−3 phosphorus atoms, find out the electron
concentrations and hole concentrations in the silicon at room temperature. Find
out the Fermi level.
(b)Repeat at temperature = 0K
n=2(2pi(n*)kT)^(3/2)exp-[(Ec-Ef)/(kT)] where (n*) = electron effective mass
The Attempt at a Solution
I have calculated the hole concentration p = 10^15 per cm^3
and the electron concentration n = 1.96*10^5 electrons per cm^3
but I am not sure where to begin for calculating the fermi level. I don't know what to plug in for Ec the conduction band edge energy. For part (b) I am also unable to find ni, the intrinsic carrier concentration of silicon at T = 0K. Any suggestions or insight would be appreciated, thanks in advance.