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**1. Homework Statement**

(a)If a silicon crystal is doped with 10^15 cm−3 phosphorus atoms, find out the electron

concentrations and hole concentrations in the silicon at room temperature. Find

out the Fermi level.

(b)Repeat at temperature = 0K

**2. Homework Equations**

n*p=ni^2

n=2(2pi(n*)kT)^(3/2)exp-[(Ec-Ef)/(kT)] where (n*) = electron effective mass

**3. The Attempt at a Solution**

I have calculated the hole concentration p = 10^15 per cm^3

and the electron concentration n = 1.96*10^5 electrons per cm^3

but I am not sure where to begin for calculating the fermi level. I don't know what to plug in for Ec the conduction band edge energy. For part (b) I am also unable to find ni, the intrinsic carrier concentration of silicon at T = 0K. Any suggestions or insight would be appreciated, thanks in advance.