Hi, if anyone can help on this issue it is much abliged... 1. The problem statement, all variables and given/known data Here are the model parameters... VTH0 (VTH NMOS) = 0.7 to get everything even... U0 (NMOS un) = 533 cm^2 / V sec or 533000000 um^2 / V sec t0x = 1.41 * 10^-8 m or 0.0141 um eox = 3.97 * 8.85 aF/um or .000035.1345 uF / um Also... VDD = 5V W/L = 10/2 2. Relevant equations Idsat = 1/2*KPn*W/L*(VDD-VTHN)^2 3. The attempt at a solution Must solve for Kpn = un * eox/tox first... Using the values above I feel I get an unreasonable value of about 1.33 uA / V^2 This results in an Idsat of roughly 10 uA A more reasonable result would give me a KPn of roughly 100 uA/V^2 There must be something wrong with the process model or I am missing a parameter or something. I am positive my units and calculations are correct as I have been through this problem many times.