- #1

- 3

- 0

the question is :"If a Si sample is doped with 10^14 boron atoms per cm3 then determine the

carrier concentration in the Si sample at 300K."[/b]

I thought that the concentration is calculate by

n = 2[(2pi*u

_{n}*kT/h^2)]^(3/2)

is this right formula ? How about the Nd = 10^14 ?

thank you.