1. The problem statement, all variables and given/known data Explain why the drift velocity of electrons in silicon are relatively high when compared to drift velocities of electrons in metals of the same size, when the same current flows through both. 2. Relevant equations 3. The attempt at a solution I stated that the number of charge carrier per unit volume in the case of conductors is n=1028m-3 and the one for the semi-conductor is n=1016m-3.