Concentration of R-G centers in a PN junction

[erioizanami]

Hey guys,
Currently taking a semiconductor device fundamentals course and we are learning about R-G currents in the depletion region of a PN junction. Usually we just consider R-G centers as impurities to be avoided in the operation of a standard rectifying diode. However, I was curious as to whether there might be a reason to increase the concentration of R-G centers in the depletion region. For example in an LED where (I am lead to believe) we want a high rate of recombination in order to produce the highest intensity light we can. Is this a real approach?

Thanks.

 

[BigJDubs]

Yes, this is a real approach. In LEDs, the presence of R-G centers can help increase the rate of recombination, thereby increasing the light output. However, it has to be done carefully and with consideration for other factors such as device degradation, so that any benefit from increased recombination is outweighed by the potential for device damage.