Hey guys, Currently taking a semiconductor device fundamentals course and we are learning about R-G currents in the depletion region of a PN junction. Usually we just consider R-G centers as impurities to be avoided in the operation of a standard rectifying diode. However, I was curious as to whether there might be a reason to increase the concentration of R-G centers in the depletion region. For example in an LED where (I am lead to believe) we want a high rate of recombination in order to produce the highest intensity light we can. Is this a real approach? Thanks.