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I Concentration of R-G centers in a PN junction

  1. May 21, 2017 #1
    Hey guys,
    Currently taking a semiconductor device fundamentals course and we are learning about R-G currents in the depletion region of a PN junction. Usually we just consider R-G centers as impurities to be avoided in the operation of a standard rectifying diode. However, I was curious as to whether there might be a reason to increase the concentration of R-G centers in the depletion region. For example in an LED where (I am lead to believe) we want a high rate of recombination in order to produce the highest intensity light we can. Is this a real approach?

    Thanks.
     
  2. jcsd
  3. May 26, 2017 #2
    Thanks for the thread! This is an automated courtesy bump. Sorry you aren't generating responses at the moment. Do you have any further information, come to any new conclusions or is it possible to reword the post? The more details the better.
     
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