1. Feb 15, 2007 #1

   free_electron

   

   HfO2 is considered to be used as a dielectric but if it crystallizes locally its electrical properties becomes unstable. This happens around 700-800 C, which is below where most semiconductor anneals require. Shouldn't this preclude its use?

    

   free_electron, Feb 15, 2007
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3. Feb 22, 2007 #2

   chemisttree

   

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   http://www.electrochem.org/meetings/scheduler/abstracts/210/1129.pdf [Broken]

    

   Last edited by a moderator: May 2, 2017

   chemisttree, Feb 22, 2007
4. Feb 22, 2007 #3

   free_electron

   

   Thanks for the paper link, very interesting. The conducting AFM is telling, since it always detects current through the dielectric, just a matter of degree of uniformity.

    

   free_electron, Feb 22, 2007

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