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DC biasing in MOSFET Rectifier

  1. Jan 3, 2016 #1
    Hi there,

    I m a beginner in Analog IC design field. Currently, I have a project which is to design a high sensitivity rectifier by using Synopsys simulator. However, I m stuck in the beginning part which is the DC biasing of MOSFET transistor.

    The design specification as below:
    Technology : 130nm
    Frequency : 900MHz - 2.4GHz
    input voltage : 0.2V - 1.0V
    sensitivity : -32dBm
    PCE : greater than 80%

    1. How to do DC biasing? how to start it? Is any link can provide? Is it different with the amplifier design?

    2. As mentioned in the journal, in order for rectifier to work with very low input power, all the transistors of rectifier should operate in the sub-threshold region. I m not clear with this part, suppose sub-threshold region will have no conduction path between drain and source. How could it able to trigger the transistor?
     
    Last edited: Jan 3, 2016
  2. jcsd
  3. Jan 3, 2016 #2

    meBigGuy

    User Avatar
    Gold Member

    What journal?

    From wikipedia: https://en.wikipedia.org/wiki/Subthreshold_conduction

    "In digital circuits, subthreshold conduction is generally viewed as a parasitic leakage in a state that would ideally have no current. In micropower analog circuits, on the other hand, weak inversion is an efficient operating region, and subthreshold is a useful transistor mode around which circuit functions are designed"

    You need to research and understand subthreshold analog circuits.
     
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