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I've taken a C-V spectrum for a n-Si schottky diode, using DLTS style apparatus, and have plotted 1/C^2 (C in pF) against the reverse bias V in volts, which is quite linear over a range, with C^-2 = -0.00023668(V)+0.0015696

Now, i wish to determine n and Vbi, so we take the depletion region capacitance equation to the power of -2, and rearrange to the form C^-2 = m(V) + d, then firstly equate m with the gradient to find n, then use the intercept component to solve for Vbi. This ends up as setting m = -2/A*epsilon*eN, where m is the gradient of the linear fitted line.

Is this the correct approach?

I'm ending up with nonsensical numbers, and can't figure out why.

I've got all the dimensions and units uniform as far as i know, eg. Permittivity in pF/cm, A in cm^2, etc.

Any ideas?

Thanks!

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# Determining n from the CV spectrum of a Schottky diode

Can you offer guidance or do you also need help?

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