Difference between the movement of oxygen ions and vacancies

In summary, there may be confusion about the difference between the movement of oxygen ions and oxygen vacancies in solid oxides. Some literature discusses the movement of negatively charged oxygen ions, while others mention the movement of positively charged oxygen vacancies. However, in crystals, the oxygen vacancy is a virtual particle and it is always oxygen that moves. The concentration and diffusion coefficient of both the ion and the vacancy may also differ.
  • #1
Seeker87
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0
Hi,

I am confused about the difference (if there is any?) between the movement of oxygen ions and oxygen vacancies inside the solid oxides. In some literature I find they are taking about the movement of negatively charged oxygen ions inside the metal oxides, while in some other cases it is positively charged oxygen vacancies that move.

Is this the same thing? In crystals I imagine the oxygen vacancy as the vacancy of the lattice oxygen atom (for example in the case of SiO2 the missing oxygen atom between the two silicon atoms). Now the oxygen vacancy is a virtual particle and in reality it is always oxygen that moves. So is there any difference between the two (movement of oxygen vacancies and oxygen ions) in terms of mobility or similar?

Thanks a lot!
 
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  • #2
Seeker87 said:
. So is there any difference between the two (movement of oxygen vacancies and oxygen ions) in terms of mobility or similar?

First the concentration of vacancies is usually less than the concentration of oxide ions. Second the oxide ion can diffuse by other mechanisms other than the vacancy (interstitial for example). Because of this the diffusion coefficient of both the ion and the vacancy are different.
 

1. What is the difference between oxygen ions and vacancies?

Oxygen ions are positively charged atoms of oxygen, while vacancies are empty spaces in a crystal lattice where an atom should be. Essentially, oxygen ions are present in a material while vacancies are the absence of an atom.

2. How do the movements of oxygen ions and vacancies differ?

Oxygen ions can move freely through a material, while vacancies are fixed in place. This is because oxygen ions have a charge and can be attracted to or repelled by other charged particles, while vacancies do not have a charge and are not affected by electrical forces.

3. What causes the movement of oxygen ions and vacancies?

The movement of oxygen ions is primarily driven by diffusion, which is the tendency of particles to move from an area of high concentration to an area of low concentration. Vacancies, on the other hand, are created and influenced by defects in the crystalline structure of a material.

4. Can oxygen ions and vacancies affect the properties of a material?

Yes, the presence and movement of oxygen ions and vacancies can greatly impact the properties of a material. For example, the diffusion of oxygen ions can affect the conductivity of a material, while the presence of vacancies can lead to structural defects and affect the material's strength and durability.

5. How can the movements of oxygen ions and vacancies be controlled?

The movement of oxygen ions and vacancies can be controlled by adjusting factors such as temperature, pressure, and chemical composition. For example, changing the temperature of a material can affect the diffusion rate of oxygen ions and vacancies, and adding impurities can also impact their movement. Additionally, techniques such as ion implantation can be used to selectively introduce or remove oxygen ions and vacancies in a material.

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