Difference of the spin Hall effect in intrinsic and extrinsic semiconductors?

Main Question or Discussion Point

Hello there,

I dont really get the difference between the extrinsic or intrinsic spin hall effect or contribution. As i understand, in extrinsic you have spin scattering by impurities, so its the spin orbit interaction of the spin with its orbit, and this orbit is influenced by an impurity.

In the intrinsic, they say it is also due to spin orbit interaction caused by the bandstructure…but in my opinion its the same as the extrinsic. the bandstructure is also made by impurities. It is meant so, the electron get a transversal component cause of scattering with the "main" atoms?

I also read, intrinsic Spin hall effect is happend DURING sacttering events, so it does not happend in scattering events. But Spin orbit interaction IS scattering (for me all spin orbit interactions do lead to a change in direction). So is that kind of spin orbit interaction in extrinsic and intrinsic different, and if s, where is the difference?

I also read something About the berry face, about and periodic parameter who gives rise to the intrinsic. Should i understand that like an electron which is coming back to its position, so its periodic and then its get , however, a transversal component?

Hope someone can help me,
 

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