Curious what the max Vox (gate to channel bias) would be across a diode connected nmos, that has its Gate/Drain tied to a high voltage source and its body tied to gnd. [Essentially functioning as a high voltage pass gate dropping the voltage by roughly a Vt] I have seen TDDB studies that force S,D,B to ground and sweep gate negative to insure large Vox across the oxide during accumulation. Was curious what the Vox would be in this situation above and if TDDB would be a concern. Any help would be appreciated. I dont think Vox in this case is very large because its still dependent on channel length and source voltage which is roughly a Vt drop away from the source. Just curious what the equation for Vox would be in this case and why.