Hope you can give me a hand here guys. I'm finding the whole carrier concentration thing a bit confusing!!! Si doped with say 10^17 P (/cm3). At 300K, calculate n, p, E_F (Fermi energy). Now I know the relations such as n=(N_c)exp[(E_c-E_F)/kT], N_c given I just cant figure out where to start. If we assume full ionization, then should n just be the doner concentration?? But then how do I find p? I know, from charge neutrality, that n + Nd = p + Na (assuming full ionization).