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Electron and hole contributions to the current of a diode

  1. Aug 15, 2010 #1
    Having some trouble with this question. I don't even know where to start to be honest. Any help/pointers greatly appreciated. Thanks!

    Been working on this for a while now and have found a possible relevant equation to add. Am I heading in the right direction? I don't even know what each term represents!


    1. The problem statement, all variables and given/known data

    A symmetric diode operates in forward bias with a total current of 1mA. What are the electron and hole contributions to this current?

    (i) In the space-change region
    (ii) In the neutral n-region, one diffusion length from the edge of the space-charge region
    (iii) In the neutral n-region, ten diffusion lengths from the edge of the space-charge region


    2. Relevant equations

    Would I use the diffusion constant?

    D = [tex]V{t}[/tex]I

    D = diffusion constant????
    [tex]V{t}[/tex] = ???????
    I = current ???????



    3. The attempt at a solution
     
    Last edited: Aug 15, 2010
  2. jcsd
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