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Etching of SiO2 layer in SOI substrate using RIE

  1. Nov 1, 2016 #1
    Hello all,
    I am trying to etch SiO2 buried layer for MEMS suspended structures using RIE and the receipe is CHF3 + 2% O2 Plasma. In my structures, the sacrificial layer is SiO2. How does the etching process vary from vertical to lateral (underneath of top Si) etching of SiO2.
     
  2. jcsd
  3. Nov 6, 2016 #2
    Thanks for the thread! This is an automated courtesy bump. Sorry you aren't generating responses at the moment. Do you have any further information, come to any new conclusions or is it possible to reword the post? The more details the better.
     
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