Finding the max. level of input signal in a mosfet

In summary, the maximum level of input signal in a MOSFET is determined by its V<sub>GS(max)</sub> rating, which can be found in the datasheet. Exceeding this level can cause "gate oxide breakdown" and permanently damage the MOSFET. It also affects the performance and can vary between different MOSFETs. To prevent this, careful selection, proper circuit design, and use of protective components are recommended.
  • #1
killerdevil
20
0

Homework Statement



2222-14.png


Homework Equations



values in part (a) and (b) which i had found:
gm = 2.2mS
ro = 25kΩ
Rin = 1MΩ
Rout = 446.43Ω
Av = 0.99


The Attempt at a Solution



all that i know is that when they refer to pinch off region, it is referring to the saturation region which means:
VDS ≥ VGS - VTN, where VTN = 1
therefore VDS ≥ 5 -1 = 4

solution given:
VDS ≥ 4
-Vo ≥ 4
Vo ≤ 4
Av Vi ≤ 4
therefore,
Vi≤ 4/Av
Vi≤ 4/0.99
Vi≤ 4.04V (ans)


my qn would be how did they show that
VDS ≥ 4
-Vo ≥ 4
 
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  • #2

Vo ≤ 4
Av Vi ≤ 4

Thank you for your post. It seems that you have already done some calculations and have found the values for gm, ro, Rin, Rout, and Av. Good work!

To answer your question, let's start by looking at the equation for Av. Av represents the voltage gain of the amplifier, and it is defined as the ratio of the output voltage (Vo) to the input voltage (Vi). In this case, Av is given as 0.99. This means that for every 1V increase in Vi, there will be a 0.99V increase in Vo.

Now, let's look at the equations for VDS and VGS. As you mentioned, VDS ≥ VGS - VTN, where VTN is the threshold voltage (1V in this case). This means that for the transistor to be in the saturation region, VDS must be greater than or equal to the difference between VGS and VTN. In this case, VGS is given as 5V, so VDS must be greater than or equal to 5V - 1V = 4V.

Next, let's look at the equation for Vo. We know that Vo is the output voltage of the amplifier, and we also know that it is related to VDS by the equation Vo = -VDS. This means that if VDS is greater than or equal to 4V, then Vo must be less than or equal to -4V.

Finally, we can combine these equations to find the relationship between Vi and Vo. Since Av = Vo/Vi, we can rearrange the equation to get Vo = Av*Vi. Substituting in the values we have, we get Vo ≤ 0.99*Vi. We also know that Vo ≤ -4V, so we can write -4V ≤ 0.99*Vi. Dividing both sides by 0.99, we get Vi ≤ -4/0.99 = -4.04V. However, since Vi must be a positive value, we can write Vi ≤ 4.04V.

I hope this helps to clarify how the solution was obtained. If you have any further questions, please don't hesitate to ask. Good luck with your studies!
 

1. How do you determine the maximum level of input signal in a MOSFET?

The maximum level of input signal in a MOSFET is determined by its maximum gate-source voltage, also known as the VGS(max) rating. This value is specified by the manufacturer and can be found in the MOSFET's datasheet.

2. What happens if the input signal exceeds the maximum level in a MOSFET?

If the input signal exceeds the maximum level in a MOSFET, it can lead to a phenomenon called "gate oxide breakdown." This can permanently damage the MOSFET and cause it to malfunction or fail.

3. How does the maximum input signal level affect the performance of a MOSFET?

The maximum input signal level directly affects the voltage and current handling capabilities of a MOSFET. Exceeding this level can cause the MOSFET to operate outside of its safe operating conditions and potentially damage it.

4. Can the maximum input signal level vary between different MOSFETs?

Yes, the maximum input signal level can vary between different MOSFETs, even if they are of the same type. This is because the VGS(max) rating is influenced by factors such as the manufacturing process and the design of the MOSFET.

5. What precautions should be taken to ensure the input signal does not exceed the maximum level in a MOSFET?

To ensure the input signal does not exceed the maximum level in a MOSFET, it is important to carefully select a MOSFET with a suitable VGS(max) rating for the application. Additionally, proper circuit design and implementation can also help prevent overvoltage on the input signal. Using protective components such as diodes and resistors can also be helpful in preventing damage to the MOSFET.

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