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## Homework Statement

A p+-n junction with the n-side donor concentration of 10

^{16}cm

^{-3}. If n

_{i}= 10

^{10}cm

^{-3}, the relative dielectric constant e

_{r}= 12, D

_{n}= 50cm

^{2}/s, D

_{p}= 20cm

^{2}/s, t

_{n}= 100ns, t

_{p}= 50ns. Calculate the hole diffusion current density 2mm from the depletion edge on the n-side under a forward bias of 0.6V.

## Homework Equations

J(p) [drift] = -qD

_{p}Δp

## The Attempt at a Solution

My only understanding of how to solve this problem is by the relevant equation given above, yet i dont know how to find Δp from the given information. Perhaps there is another equation that suites better in solving this problem given the parameters at hand.