A p+-n junction with the n-side donor concentration of 1016cm-3. If ni = 1010cm-3, the relative dielectric constant er = 12, Dn = 50cm2/s, Dp = 20cm2/s, tn = 100ns, tp = 50ns. Calculate the hole diffusion current density 2mm from the depletion edge on the n-side under a forward bias of 0.6V.
J(p) [drift] = -qDpΔp
The Attempt at a Solution
My only understanding of how to solve this problem is by the relevant equation given above, yet i dont know how to find Δp from the given information. Perhaps there is another equation that suites better in solving this problem given the parameters at hand.