The schematic figure, depicted below, shows a 2D layer (yellow) which is over an insulated layer shown by green (see (a)). A potential gate is below the insulator layer and I want to induce a constant potential in the part of the yellow layer located over the gate (See (b)). In other words, I want only to shift the band structure of the yellow 2D layer in that region without any charge transfer between the gate and the yellow layer. Does this structure fulfill this goal? If not, how can I do that?