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Impurity concetration

  1. Apr 8, 2007 #1
    I have a question here,
    A uniform doped n-type silicon substrate of 0.1ohm-cm resistivity is to be subjected to a boron diffusion with constant surface concetration of 4.8*10^17/cm cubic.The desired junction depth is 2.8*10^-6m .Calculate the impurity concetration for the boron diffusion as a function of distance from the surface and how long will it take to cover the distance if the temperature at which this diffusion is conducted is a 1100Cetigrade
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  2. jcsd
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