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Homework Statement
Why do InP diode has larger peak to valley current ratio as compared to GaAS diode?
Both InP (Indium Phosphide) and GaAs (Gallium Arsenide) are semiconducting materials used in electronic devices. InP is a compound of Indium and Phosphorus, while GaAs is a compound of Gallium and Arsenic.
The Peak-to-Valley Current Ratio is a measure of the current amplification capability of a semiconductor device. It is calculated by dividing the peak current by the valley current.
In general, GaAs has a higher PVCR compared to InP. This is due to the higher electron mobility of GaAs, which allows for a faster and larger current response. However, the PVCR of InP can be improved by using specific device structures and materials.
GaAs is generally considered the better material for high-frequency applications due to its higher electron mobility and PVCR. This makes it suitable for devices that require fast switching speeds and high power amplification.
Aside from their different chemical compositions, InP and GaAs have distinct properties that make them suitable for different applications. InP has a wider bandgap, which makes it more suitable for optoelectronic devices such as lasers and photodiodes. On the other hand, GaAs has a higher electron mobility and PVCR, making it more suitable for high-speed electronic devices.