Hello, I will stress my life to think the idea of a Interface state Density (Dit). I understand the idea of solving the Interface State Density versus Energy distribution graph with given charge pumping measurement. I am very curious about how to get the range of energy by using rising and falling (pulse pattern) equation?. I just got value of Dit when using maximum substrate current. It's getting from measurement condition. Howerver, I can not do a relation between energy distribution and trap state density cause Dit value I get from substrate current versus pulse base level graph. I guess I just don't understand the idea on how to create/relate between energy range(E-Ec) and Dit in order to solve a problem." .... I apologize for the convuluted way I've asked this question. I think the problem is more that I'm confused to the extent that I don't even really know HOW to ask the question. So hopefully, if someone is patient enough with me...I can weed through this INterface State Density study.