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Interstitial position probability?

  1. May 7, 2015 #1
    1. The problem statement, all variables and given/known data
    A silicon crystal is being doped with Ni atoms. The formation energies for substitutional and interstitial Ni atoms are Es= 0.74 eV and Ei=0.16 eV, respectively. At 320 centigrade, what is the probability for a Ni atom to be placed in an interstitial configurations?

    2. Relevant equations
    ## \frac{n_v}{N} = e^{-\frac{Q}{RT}} ##

    3. The attempt at a solution
    I started this problem by calculating the number of vacancies for the substitutional and interstitial energy at 320 C. However, I am not so sure where to go from there. Would would I use this equation to get a probability?
     
  2. jcsd
  3. May 12, 2015 #2
    Thanks for the post! This is an automated courtesy bump. Sorry you aren't generating responses at the moment. Do you have any further information, come to any new conclusions or is it possible to reword the post?
     
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