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Marterial Science (Chemistry Related) Problem

  • Thread starter Double A
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Material Science (Chemistry Related) Problem

I am having a hard time starting my solution to the following problem:

In a metal-oxide-semiconductor (MOS) device, a thin layer of [tex]SiO_2[/tex] (density = 2.20 [tex]Mg/m^3[/tex]) is grown on a single crystal chip of silicon. How many Si atoms and how many O atoms are present per square millimeter of the oxide layer? Assume that the layer thickness is 100 nm.
So far I have been looking throughout the text book at some sample problems but the sample problems are not asking for a similar solution to this question. I have also referred to my lecture notes and have not gotten any where for quite some time. Mentally I thought that I could find the volume of the silicon oxide but I was incorrect in my mental calculations. Please help me get started.
 
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Answers and Replies

  • #2
CarlB
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From the density and thickness, you can get the mass in a square millimeter of oxide. From there, you can get the number of Si and O atoms by knowing how much these atoms weigh.

Carl
 
  • #3
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Thanks I did arrive at a solution of 2.21x[tex]10^{15}[/tex] atoms of SI and 4.41x[tex]10^{15}[/tex] atoms of O.
 
  • #4
But What formula did you use? I did not get the same answers
 
  • #5
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yes, some clarification to this post is needed. what steps do u take to get those answers?
 

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