(adsbygoogle = window.adsbygoogle || []).push({}); 1. The problem statement, all variables and given/known data

A GaN semiconductor (EG=3.45 eV, intrinsic concentration is ni=1e-14 cm-3) is initially barely doped n-type so that the electron concentration is 1 electron/cm3. Acceptors are added to the material. How far (in energy) and in what direction (in energy) must the fermi energy move

to result in 1 hole per cm3.

2. Relevant equations

3. The attempt at a solution

I do not even know where to begin. Any help would be appreciated. thanks.

**Physics Forums - The Fusion of Science and Community**

# Microelectronic Circuits

Know someone interested in this topic? Share a link to this question via email,
Google+,
Twitter, or
Facebook

- Similar discussions for: Microelectronic Circuits

Loading...

**Physics Forums - The Fusion of Science and Community**